发明名称 HIGH VOLTAGE INSTALLATION
摘要 <p>This high-voltage installation has a metallic enclosure (1) which is filled with insulating gas and surrounds voltage-carrying active parts. In addition, it has at least one at least partial protective coating (7, 9, 10) either on the internal surface of the enclosure (1) or on the external surface over the active parts, or at least one at least partial protective coating (7, 9, 10) both on the internal surface of the enclosure (1) and on the external surface of the active parts. It is intended to provide a high-voltage installation in which free electrons are also reliably removed from the insulating gaps and in which partial discharges generated by free particles are reduced to noncritical values of intensity. This is achieved in that the at least one protective coating (7, 9, 10) is doped with at least one fullerene which absorbs free electrons. Protective coatings which have a surface of vapor-deposited fullerene are also particularly suitable.</p>
申请公布号 CA2137104(A1) 申请公布日期 1995.06.29
申请号 CA19942137104 申请日期 1994.12.01
申请人 ABB RESEARCH LTD. 发明人 HERBST, INGO;PIETSCH, RALF-DIETER
分类号 H01H33/64;H02G5/06;(IPC1-7):H05K5/04 主分类号 H01H33/64
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