发明名称 |
Speicherzelle und Leseschaltung. |
摘要 |
The present invention relates to a memory cell, and more particularly to a single-bit, dual-port cell, and a single-sided read circuit for use with one or more such cells. The cell may, in one embodiment, be used in a static random access memory (RAM) array, and may be implemented in BICMOS technology on an integrated circuit. The cell has a flip-flop storage unit (10) comprising a CMOS circuit of cross-coupled inverters coupled to dual CMOS pass gates (12, 22) to provide isolation and data transfer. The storage unit is also coupled to a bipolar read line driver (44) in a particular configuration to accomplish rapid bit line pull-up or pull-down for high speed read operation. Several alternative embodiments are disclosed. |
申请公布号 |
DE68920699(T2) |
申请公布日期 |
1995.06.29 |
申请号 |
DE1989620699T |
申请日期 |
1989.09.26 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORP., ARMONK, N.Y., US |
发明人 |
DAWSON, JAMES WILLIAM, POUGHKEEPSIE, N.Y. 12603, US;PHILLIPS, PANAGIOTIS ANDREW, NEWBURGH, N.Y. 12550, US |
分类号 |
G11C11/41;G11C8/16;(IPC1-7):G11C8/00;G11C11/412 |
主分类号 |
G11C11/41 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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