| 摘要 |
<p>The present invention teaches a method of manufacturing antifuse devices. The method comprises several steps the first of which involves forming a first conductive layer (14) superjacent a semiconductor substrate. Second, a patterned antifuse layer (15) is formed superjacent the patterned first conductive layer. Third, the first conductive layer (14) is patterned. Fourth, a patterned first dielectric layer (22) having a first and second via is formed superjacent the resultant structure of the previous step. Fifth, a second conductive layer (42,44) is formed superjacent the resultant structure of the previous step, thereby providing electrical contacts between the second conductive layer and the patterned antifuse layer and between the second conductive layer and the first conductive layer. <IMAGE></p> |
