Integrated structure pad assembly for wire bonding on active area in power semiconductor devices, particularly with cellular structure, and manufacturing process therefor.

摘要

An integrated structure pad assembly for lead bonding to a power semiconductor device chip comprises a chip portion having a top surface covered by a metallization layer (10) and which comprises a first sub-portion (1) wherein functionally active elements of the power device are present; said chip portion comprises at least one second sub-portion (11) wherein no functionally active elements of the power device are present, and a top surface of the metallization layer (10) is elevated over said at least one second sub-portion (11) with respect to the first sub-portion (1) to form at least one protrusion which forms a support surface for a lead.