发明名称 Line decoding circuit for a memory working with low power voltages.
摘要 The invention relates to a decoding circuit (200) which can operate with low selection voltages. Selection transistors (9) are connected in series between an input terminal (3) and an inverter (10) whose output is connected to an output terminal (4). The inverter (10) includes two transistors of type P (11) and N (12) respectively, mounted in series. The control gate of the first transistor (11) is connected to the selection transistors (9), whilst the control gate of the second transistor (12) is connected to the input terminal (3). <IMAGE>
申请公布号 EP0660331(A1) 申请公布日期 1995.06.28
申请号 EP19940470041 申请日期 1994.12.21
申请人 STMICROELECTRONICS S.A. 发明人 DROUOT, SYLVIE
分类号 G11C11/418;G11C8/10;G11C11/413 主分类号 G11C11/418
代理机构 代理人
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