| 摘要 |
<p>PURPOSE:To improve the manufacture yield by arranging gate electrodes which are connected to the outermost gate bus lines in mutually opposite direction so that the gate electrodes of all thin film transistors(TR) are interposed between bus lines. CONSTITUTION:The 1st-(N-1)th gate bus lines GB1-GBN-1 are so constituted that gate electrodes face the right side. A right-end gate bus lines GBN is provided at the position where the gate bus line GBN-1 is provided originally and gate electrodes are directed to the left side. Further, a light shielding dummy bus line DMB is provided between the gate bus line GBN-1 and gate bus line GB to cut off excessive light. Thus, all the gate electrodes are arranged between two gate bus lines to eliminate the generation of a TFT defect on a specific bus line, thereby improving the display quality.</p> |
