Semiconductor integrated circuit device having low-power consumption signal input circuit responsive to high-speed small-amplitude input signal.

摘要

A semiconductor synchronous dynamic random access memory device is responsive to a clock signal (CLK) and a clock enable signal (CKE) for selectively carrying out internal sequences such as a read-out sequence, a write-in sequence and a self-refreshing sequence, and a signal input unit (16j) assigned to the clock enable signal has a complementary logic gate type signal input circuit (16n) enabled in a self-refreshing sequence for receiving the clock enable signal and a current-mirror type signal input circuit (16m) enabled in other sequences for receiving the clock enable signal so that the current consumption of the signal input unit is decreased during the self-refreshing sequence.