| 摘要 |
PURPOSE:To enlarge the scope of application of solid silicon treated by coating with hydrogen and control the density of adsorbed hydrogen by irradiating the surface of the solid silicon kept in a vacuum with atomic hydrogen in increasing the density of the adsorbed hydrogen and with electron beams in decreasing the density of the adsorbed hydrogen. CONSTITUTION:This method for controlling the density of adsorbed hydrogen is to irradiate the surface of solid silicon kept in a vacuum with atomic hydrogen in increasing the density of the adsorbed hydrogen on the surface of the solid silicon and with electron beams in decreasing the density of the adsorbed hydrogen on the surface of the solid silicon. The atomic hydrogen used in increasing the amount of coated hydrogen on the surface of the solid silicon has remarkably high chemical reactivity as compared with that of molecular hydrogen and is adsorbable on the surface of the silicon even with an extremely low thermal energy. Thereby, the hydrogen can be adsorbed on the surface of the silicon at a higher rate and a lower temperature than those of conventional hydrogen heat treatment in which the hydrogen unconverted into atoms is adsorbed on the surface of the silicon. |
