| 摘要 |
PURPOSE:To provide a producing apparatus capable of pulling up and growing a single crystal with few OSN generation and excellent in pressure resistant characteristics of an oxide film by adjusting an optimum temperature gradient in the direction of pulling up the single crystal during pulling up. CONSTITUTION:This single crystal producing apparatus is equipped with a crucible 1 receiving a molten liquid 6 of a single crystal to be grown, a device 2 to heat the molten liquid, a pulling up device which grows a single crystal 5 by bringing a seed crystal 4 into contact with the surface of the molten liquid 6 in the crucible, a protecting gas inlet pipe 9 which surrounds the single crystal being pulled up and a metal chamber 7 receiving each of the above described materials. Over the molten liquid 6 in the crucible, a heat resistant and heat insulating material 10 which is cylindrical or tapered to have smaller diameter toward downward and arranged around an area of pulling up the single crystal is installed. The material is attached below the protecting gas inlet pipe 9. The material 10 is made of graphite an the surface of which is preferably coated with silicon carbide. |
