发明名称 |
Förbindnings- och monteringsteknik för flerchopmoduler |
摘要 |
Preparation of a multichip-module has a series of layers of dielectric material with embedded conductors. The dielectric material is temperature stable, base-resistant polymer having a dielectric contact of 3 or less on a non-conductive base. It forms a boundary edge for currentless, autocatalytic production of conductor paths. The dielectric material is provided with a layer of organic solvent soluble material (lift-off layer). The dielectric material and lift-off layer are structured in a lithographic step, using ether direct or indirect structuring and forming trenches in the dielectric material having an aspect ratio of 1 or more. A metallic seed layer is formed by evaporation. The lift-off layer is removed using an organic solvent and conductor paths are formed in the trenches by currentless metal deposition. <IMAGE> |
申请公布号 |
FI953174(A0) |
申请公布日期 |
1995.06.27 |
申请号 |
FI19950003174 |
申请日期 |
1995.06.27 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
LEUSCHNER, RAINER;AHNE, HELLMUT;BIRKLE, SIEGFRIED;HAMMERSCHMIDT, ALBERT;SEZI, RECAI;NOLL, TOBIAS;DUMOULIN, JR., ANN |
分类号 |
G03F7/075;C23C14/20;G03F7/26;H01L21/48;H05K3/00;H05K3/02;H05K3/04;H05K3/10;H05K3/18;H05K3/38;H05K3/46;(IPC1-7):H01L |
主分类号 |
G03F7/075 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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