| 发明名称 |
PREPARATION OF CRYSTALLINE SILICON CARBIDE COATING AT LOW TEMPERATURE |
| 摘要 |
A method of forming crystalline silicon carbide films is disclosed. The method comprises a chemical vapor deposition process in which a substrate is heated to a temperature above 600 DEG C. in the presence of a silicon containing cyclobutane gas. |
| 申请公布号 |
JPH07165497(A) |
申请公布日期 |
1995.06.27 |
| 申请号 |
JP19940192511 |
申请日期 |
1994.08.16 |
| 申请人 |
DOW CORNING CORP |
发明人 |
MAAKU JIYON ROBODA;JIIPIN RI;ANDORIYUU JIEI SUTETSUKURU;CHIYON YUAN |
| 分类号 |
C30B25/18;C23C16/32;C30B25/02;C30B29/36;H01L21/205 |
主分类号 |
C30B25/18 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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