GAAS SINGLE CRYSTAL WAFER AND ITS PRODUCTION AND METHOD FOR SORTING THE SAME

摘要

PURPOSE:To provide a method for producing a GaAs single crystal wafer so designed that only wafer having such crystal surface as to easily remove a Ga oxide therefrom is sorted to ensure a thermal cleaning to be carried out stably and easily and enable high-quality epitaxial layer to be grown. CONSTITUTION:The photoelectron spectrum on the surface of a GaAs single crystal wafer is determined by X-ray photoelectron spectroscopy; The conditions for the determination are as follows: AlKalpha-rays are used as X-ray source; the angle of incidence of X-rays with the surface of a test sample is 20 deg.; and, the angle of an analyzer input lens with the surface of the test sample is 75 deg.. Such a GaAs single crystal wafer as to satisfy the following two conditions is sorted; namely: (Ga-O bond peak height)/(Ga-As bond peak height) <=0.05, and (As-As bond peal height)/(As-Ga bond peak height) >=0.5.