| 发明名称 |
Method for forming a capacitor in a DRAM cell using a rough overlayer of tungsten |
| 摘要 |
In accordance with the invention a rough overlayer, e.g., a tungsten film, is used to define a plurality of pillars in a polysilicon electrode layer. This increases the surface area of the polysilicon electrode and thus increases capacitance of a capacitor incorporating the electrode layer in a DRAM cell.
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| 申请公布号 |
US5427974(A) |
申请公布日期 |
1995.06.27 |
| 申请号 |
US19940214602 |
申请日期 |
1994.03.18 |
| 申请人 |
UNITED MICROELECTRONICS CORPORATION |
发明人 |
LUR, WATER;KAO, CHANG-SHYAN;LIN, PETER Y. |
| 分类号 |
H01L21/02;H01L21/8242;H01L27/108;(IPC1-7):H01L21/70;H01L21/469 |
主分类号 |
H01L21/02 |
| 代理机构 |
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| 主权项 |
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