| 发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
| 摘要 |
A semiconductor device and a method for forming the same. The semiconductor device comprises an insulating or semiconductor substrate, a thermally-contractive insulating film which is formed on said substrate and provided with grooves, and semiconductor film which is formed on the thermally-contractive insulating film and divided in an islandish form through the grooves. The thermally-contractive insulating film is contracted in a heat process after the semiconductor film is formed. |
| 申请公布号 |
KR950006966(B1) |
申请公布日期 |
1995.06.26 |
| 申请号 |
KR19920005090 |
申请日期 |
1992.03.27 |
| 申请人 |
SEMICONDUCTOR ENERGY CABORATORY CO., LTD. |
发明人 |
YAMAJAKI, SUNPEI;TAKEMURA, YASUHIKO |
| 分类号 |
G02F1/136;G02F1/1368;H01L21/20;H01L21/336;H01L21/762;H01L21/77;H01L21/84;H01L27/06;H01L27/092;H01L27/12;H01L29/04;H01L29/78;H01L29/786;(IPC1-7):H01L21/20 |
主分类号 |
G02F1/136 |
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