FORMING METHOD OF ZN3P2 EPITAXIAL THIN FILM

摘要

The method grows the zinc phosphite epitaxial layer of single crystal on the semiconductor substrate of indium phosphite which is photoelectric materials. The method has the steps of growing the single crystalline film of indium galium arsenic phosphite, and forming epitaxial film of zinc phosphite by diffusion of zinc through junction between substrate and thin film during heating under zinc phosphite atmosphere. It grows to thick single crystal, out of which solar battery with high efficiency can be manufactured.