FORMING METHOD OF ALUMINIUM ALLOY METAL WIRE

摘要

To easily remove etching remnants produced after etching the Al alloy layer, an Al metalization is suggested which is suitable to the metal lines of large aspect ratio. To do this, SiCl4 and N2 gases mixed to the main gas of Cl2 is used as etching gases. Exposed Al alloy is etched in a RIE chamber in which the mixed gases of SiCl4/N2/Cl2 are injected by 50±10/20±5/30±10 SCCM, the pressure is kept to 30±10 mTorr, and the voltage of 210±50 V is applied to the bottom of the wafer. By this method no remnants are left during Al alloy etching.