| 发明名称 |
ETCHING METHOD OF NEGATIVE ION PLASMA |
| 摘要 |
In the method of etching semiconductor by using a chemical gas such as CCl4 and SF4 which generate a negative ion plasma, as an etching gas, the method comprises the steps of (1) etching the vertical section by using a positive ion plasma and (2) etching by using a negative ion plasma.
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| 申请公布号 |
KR950006979(B1) |
申请公布日期 |
1995.06.26 |
| 申请号 |
KR19920010190 |
申请日期 |
1992.06.12 |
| 申请人 |
HYUNDAI ELECTRONICS IND. CO., LTD. |
发明人 |
PARK, HUI - KUK;HA, JAE - HUI;KANG, MI - YONG |
| 分类号 |
H01L21/302;H01L21/306;H01L21/3065;H01L21/822;H01L21/8242;H01L27/04;H01L27/10;H01L27/108;(IPC1-7):H01L21/306 |
主分类号 |
H01L21/302 |
| 代理机构 |
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