METAL WIRING METHOD OF SEMICONDUCTOR DEVICE

摘要

By adding the process that removes polymer attached to the side walls of metal lines during metalization, the easy removal of wafer cleaning solution and photoresist covered on the surface of the wafer and the easy formation of aluminum oxide to the side walls of metal lines are obtained. The etching process for removing the polymer is carried in the oxygen plasma state of 10 to 100 SCCM generated at the pressure of 200 to 1500 mTorr and the rf power of 100 to 1000 Watt. The etching process is done for 30 to 200 seconds.