| 摘要 |
PURPOSE: To obtain a radiation emitting semiconductor diode whose start current is low and the maximum radiation output is high. CONSTITUTION: A protective layer 3 provided with an inorganic material is provided on a sacrificial layer 1, before a film is adhered. The protective layer prevents the sacrificial layer 1 from being damaged, and therefore the part of the film which cannot be removed is prevented from being piled up on a fist side 11 provided with a metallic layer 7, for example. The protective layer 3 is provided with a metal such as aluminum. The sacrificial layer 1 is prevented from being melted undesirably, due to ultraviolet rays which are emitted through sputtering lamination processing of film. Consequently, the remaining part of the sacrificial layer 1 of the metallic layer 7 which is allowed to have undesirable soldering property is prevented. A laser diode, manufactured through such a process, has a long service life and is very appropirate to a usage for high output. |
