| 摘要 |
PURPOSE:To enable reduction in margin of the black matrix, a wider opening ratio and high definition and high contrast display by directly forming a color filter layer consisting of the color filters and the black matrix on the TFT substrate. CONSTITUTION:A single crystal Si thin film formed on the porous Si substrate 1, as the TFT substrate, by the epitaxial growth method is used as the active layer of the thin film transistor. Then an inorganic transparent member consisting of SiO2 is formed on the resulting TFT substrate and thereafter the picture element electrodes 7 consisting of ITO and the passivation film 10 consisting of SiNx are formed successively on it. Subsequently, the black matrix 11 consisting of Cr is formed on the passivation film 10 and the RGB color filters 12 are formed on the regions of the passivation film 10 on the picture element electrodes 7. Further, the flatening film 13 consisting of polyimide is formed. The counter-substrate is obtained by forming the counter-electrode 14 consisting of an ITO film on the glass substrate 16 and thereafter forming the oriented film 15 consisting of polyimide on it. |
