| 摘要 |
PURPOSE:To form a thin film with the uniform direction of a crystal axes and a single crystal thin film from a first growth layer by a method wherein after a periodic surface roughened structure of a height in a specified range of a specified period is formed at the specified period, a vapor growth of the thin films is performed. CONSTITUTION:A periodic surface roughened structure of a height of 20% or higher to 100% or lower at a period 10 times or longer to 100 times or shorter than that of a lattice in the layer direction of a thin film is formed on the surface of a base layer 1. Then, when an Ar ion beam 3 is emitted on the surface of this SiO2 roughened structure 2 at an incident angle of one degree, unbounded atoms, which are used as growth nuclei sites 4, are formed on the projected parts of the structure 2. Then, the growth rate of the thin film is slowed down at a low pressure and a growth temperature is made high, whereby the Si thin film 6 is formed. Here, the feed of SiH4 gas is once stopped to perform a heat treatment, whereby coalescence of fellow growth nuclei is caused and an Si (100) single crystal thin film 7, which is single crystal grown from a first growth layer, can be obtained. |
