| 摘要 |
PURPOSE:To provide a pattern forming method by a simple three-layer resist method. CONSTITUTION:A lower resist layer 13 is formed on a silicon substrate 11. After a resin composition which contains poly(siloxane)derivative having alkoxy group, for example, poly(di-t-butoxysiloxane) and an acid generating agent which generates acid by exposure, for example, bis(4-t-butylphenyl) hexafloroantimonate is spin-coated on the lower layer 13, it is exposed and heated to form a SiO2 film 15 as an intermediate layer. An upper resist layer 17 is formed on the intermediate layer 15. Exposure due to electron beam and development are done on the layer 17 to perform patterning. Next, after CHF3-RIE is done for the intermediate layer, O2-RIE is done for the lower layer. |
