| 摘要 |
PURPOSE:To provide a manufacturing method of a capacitor element which reduces leakage current without decreasing its capacitance. CONSTITUTION:A Ta2O5 film 5 is formed on an Si-containing lower electrode W film 4 as a dielectric film. Then, thermal treatment is carried out in atmosphere wherein water vapor is incorporated by making H2 gas pass through a bubbler heated with pure water. The Ta2O5 film 5 is oxidized without oxidizing a lower electrode and oxygen lacking defect in a film is repaired. Furthermore, Si contained in the W film 4 is thermally diffused to the Ta2O5 film 5, and electrical defect in the Ta2O5 film 5, especially near a lower electrode interface can be repaired. Thereby, leakage current can be reduced by at least one digit when compared to a capacitor element which is manufactured without containing Si in W of a lower electrode. |
