发明名称 MONOCHROMATIC ELECTRON BEAM SOURCE AND ITS MANUFACTURE
摘要 <p>PURPOSE:To provide an electron beam source narrowing an energy width and further generating a stable electron flow even against a voltage fluctuation. CONSTITUTION:A plurality of layers of coating films 2, 3 are provided on a conductor 1 of a needle-shaped cathode, to apply voltage 6 to across the films and opposed anodes 5. In this way, a quantum well layer 3 and capacitor layers 2, 7 of energy barrier of interposing this layer 3 are formed in a cathode point end part, and a stable monochromatic electron beam is emitted by a resonance tunnel phenomenon through a quantum level 8.</p>
申请公布号 JPH07161284(A) 申请公布日期 1995.06.23
申请号 JP19930310252 申请日期 1993.12.10
申请人 HITACHI LTD 发明人 NISHIYAMA HIDETOSHI;OKAMOTO MASAKUNI;OSHIMA TAKU;KURODA KATSUHIRO
分类号 H01J9/02;H01J1/30;H01J1/304;(IPC1-7):H01J1/30 主分类号 H01J9/02
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