发明名称 |
Acoustic surface wave oscillator for use in portable telephone |
摘要 |
The acoustic surface wave device includes a piezoelectric element (1) with an ionic implantation layer (11) which has been thermally treated, covering part of the surface. A comb type resonator electrode (12) is provided in on the ionic implantation layer. The structure comprises a first resonator and a second resonator, the first resonator having a frequency which is approximately equal to an anti-resonance frequency of the second resonator. Both resonators include the comb-type electrode. Specific conditions are laid down for the thickness of the ionic implantation layer w.r.t. the wavelength of the acoustic surface wave. |
申请公布号 |
FR2714200(A1) |
申请公布日期 |
1995.06.23 |
申请号 |
FR19940010078 |
申请日期 |
1994.08.17 |
申请人 |
FUJITSU LTD |
发明人 |
NISHIHARA TOKIHIRO;MATSUDA TAKASHI;UCHISHIBA HIDEMA;IKATA OSAMU;SATOH YOSHIO;KOMENOU KAZUNARI |
分类号 |
H03H3/08;H03H9/02;H03H9/05;H03H9/10;H03H9/25;H03H9/64 |
主分类号 |
H03H3/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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