THIN FILM TRANSISTOR ELEMENT

摘要

PURPOSE:To obtain such a thin film transistor element capable of uniformizing display characteristics even when a large-size substrate is patterned into plural numbers of parts in the production of the thin film transistor element. CONSTITUTION:The element is equipped with a gate electrode 1 formed on a substrate, first semiconductor layer 5a and second semiconductor layer 5b arranged parallel to each other on the gate electrode 1 with a gate insulating film interposed, drain electrode 3 between the first semiconductor layer 5a and the second semiconductor layer 5b to partly overlap both of the semiconductor layers, source electrode 2 partly overlapping the first semiconductor layer 5a in the opposite side of the semiconductor layer 5a to the second semiconductor layer 5b.