| 摘要 |
PURPOSE:To provide a phase shift mask and an exposure technology capable of obtaining a transfer pattern with high dimensional accuracy. CONSTITUTION:This phase shift mask is equipped with a first mask pattern and a second mask pattern. The first mask pattern consists of a first main aperture mask pattern, a first sub-aperture mask pattern which is formed on both sides of the first main aperture mask pattern and is separated from the pattern by a light-shading film 2 around the pattern, and a transparent film 8 formed on the first main aperture mask pattern as a phase shifter. The second mask pattern consists of a second main aperture mask pattern, a second sub- aperture mask pattern which is formed on both sides of the second main aperture mask pattern and is separated from the pattern by a light-shading film 2 around the pattern, and a transparent film 8 formed on the second sub- aperture mask pattern as a phase shifter. The light-shading film 2 on the outside of the first-sub-aperture mask pattern in the one side has a structure the same as that of the light-shading film 2 on the outside of the second sub-aperture mask pattern in the other side. |
