| 摘要 |
<p>PURPOSE: To improve heat transport characteristic, interface mechanical stress characteristic, current-limiting characteristic, etc., by forming a current-limiting and waveguide layer having lattice constants and thermal expansion coefficients similar to those of an upper part clad layer and band gap energies larger than that of an active layer. CONSTITUTION: As a laser oscillation layer, a lower part clad layer 300, an active layer 400, an upper part clad layer 500 are formed, and a protruding part of a mesa 111 is provided at the center on the upper surface of the upper part clad layer 500. Both side surfaces of the mesa 111 and the upper part clad layer 500, exposed on both sides of mesa 111, are covered with a ZnSe current-limiting and waveguide layer 120. The current-limiting and waveguide layer 120 is similar to the upper part clad later 500 in lattice constant and thermal expansion factor, while it is smaller than that of the upper clad layer 500 in reflective index and larger that the active layer 400 in band gap energy. Then a p-electrode 900 is formed over the entire upper surface, while an n- electrode 110 is formed at the bottom surface of a substrate 100.</p> |
