| 摘要 |
<p>PURPOSE:To decrease running current when data is written or erased and to realize low voltage and low current consumption by embedding a ferroelectric capacitor in a back channel of a thin film transistor comprising a memory cell and inverting polarizing characteristics of the ferroelectric capacitor by microcurrent. CONSTITUTION:A ferroelectric capacitor 3 is embedded in a back channel of a thin film transistor 2 comprising a memory cell 1. And Polarizing characteristics of the ferroelectric capacitor 3 are controlled by microcurrent for switching control of the on and off operation of the transistor. As a result, only a charge necessary to invert polarization of the ferroelectric capacitor 3 is needed for current running in the memory cell at the time of a write or an erase operation so that operation with even lower current can be realized. Also, since the ferroelectric capacitor 3 can easily invert polarization even in a weak field strength, a memory cell operable in low voltage can be easily realized.</p> |
