Bipolar semiconductor structure with epitaxial layer

摘要

The bipolar semiconductor structure has an epitaxial layer (3) of first conductivity type arranged on a substrate (1). Diffusion zones (5) of second conductivity type are arranged in the epitaxial layer. To prevent a conductivity inversion at the surface of the epitaxial layer in the entire wafer region without using masks dopant atoms of the first conductivity type are introduced and are electrically activated so that a near surface doping gradient of the first conductivity type is realised.