发明名称 SEPARATE IDDQ-TESTING OF SIGNAL PATH AND BIAS PATH IN AN IC
摘要 An IC is tested through IDDQ-measurements. The IC's substrate comprises a region of a conductivity type with a supply node for supply of the circuit and with a biasing node for connection to a biasing voltage to bias the region. IDDQ-testing of the circuit is conducted while the supply node and the biasing node are galvanically disconnected to separate the contribution to the quiescent current from the circuit functionality features from the contribution to the quiescent current from the biasing features.
申请公布号 WO9516923(A1) 申请公布日期 1995.06.22
申请号 WO1994IB00389 申请日期 1994.12.05
申请人 PHILIPS ELECTRONICS N.V.;PHILIPS NORDEN AB 发明人 SACHDEV, MANOJ
分类号 G01R31/28;G01R31/30;G01R31/316;G11C29/04;H01L21/822;H01L27/04;(IPC1-7):G01R31/28 主分类号 G01R31/28
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