A semiconductor device with a MOSFET, having a source and drain in contact with respective conductive layers, includes (a) a contact pin electrically insulated from the gate electrode and in electrical contact with the drain; (b) a contact pad electrically insulated from the gate electrode and in electrical contact with the source; (c) a first wiring in electrical contact with the contact pin; and (d) a second wiring in electrical contact with the contact pad and electrically insulated from the first wiring. Also claimed are similar semiconductor devices and processes for their prodn..
