摘要 |
The apparatus includes a gas diffuser plate (14) having an integral heat pipe (20) for accurately controlling the temperature of the diffuser plate (14) during CVD processing to prevent unwanted tungsten (or other material) deposition on the diffuser plate. The apparatus is also useful as an RF plasma cleaning in which the diffuser plate (14) acts as an RF electrode, the heat pipe tube (22) acts as an RF input lead, and the apparatus further includes a connector (89) to an RF power source. Additionnaly, in combination, the heat pipe-cooled gas diffuser plate (14) and RF electrode may be used advantageously in plasma enhanced chemical vapor deposition (PECVD).
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