A high current, high voltage, vertical PMOS transistor.

摘要

The vertical transistor (30) includes a substrate of a given first carrier type with an upper area and a lower area. A combination gate and source area has a centre where the combination gate and source area comprises a well region of a second carrier type. The source region is of the first carrier type, the first and second gate regions are of the second carrier type. The first and second pinch-off regions (44) are of the first carrier type. The first pinch-off region is in the centre with the first gate region (33) surrounding it, with the first source region (32) surrounding that, with the second gate region (34) surrounding that, and the second pinch-off region (46) surrounding that.