METHOD OF FORMING MINUTE PATTERN

摘要

paving a photoresist on a silicon substrate so as to form and soft-bake a photoresist layer on the upper part of the substrate; depositing a photomask of a designated shape so as to selectively light-expose the photoresist layer; presilylation baking the light-exposed wafer at 110 to 150≦̸C; silylating the resist layer of the baked wafer with a monofunctional silylating agent at 110 to 150≦̸C; and wet developing the silylated resist layer.