发明名称 High-frequency semiconductor device including microstrip transmission line
摘要 A semiconductor device includes a silicon substrate on which a circuit having a predetermined function is formed and a high frequency circuit chip which is mounted on the silicon substrate and operates at high frequencies, and operates with functions of the silicon substrate and the high frequency circuit chip, wherein a thin film tape having a microstrip structure including an insulating film, a signal line on a surface of the insulating film and a grounding layer on a rear surface of the insulating film, is disposed on the silicon substrate, whereby the silicon substrate is electrically connected to the high frequency circuit chip. As a result, a conventional silicon substrate is employed and a production cost is reduced.
申请公布号 US5426319(A) 申请公布日期 1995.06.20
申请号 US19930054245 申请日期 1993.04.30
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 NOTANI, YOSHIHIRO
分类号 H01L23/04;H01L21/60;H01L23/02;H01L23/14;H01L23/28;H01L23/498;H01L23/66;(IPC1-7):H01L23/02;H01L23/12;H01P1/00 主分类号 H01L23/04
代理机构 代理人
主权项
地址