| 摘要 |
<p>PURPOSE:To make small the photo sensor size and to make lower in cost, by forming the electroluminescent element and the photo detection element on one semiconductor substrate, and by forming the elements on one plane of the substrate through the provision of shield wall between the both elements. CONSTITUTION:The insulation film 2 is formed on the major plane of the semiconductor substrate 1, and the part where the photo detection element 5 and the electroluminescent element 4 are set on the film 2 is removed. Further, the photo detection element 3 is formed by evaporating the electodes 6, 7 on the removed part 5 of the insulation film 2 through sequential formation of n and p type regions. Further, the electroluminescent element 4 is isolated electrically from the photo detection element 3, forming separate n and p type regions, and the fluoresecent substance layer 9 and the transparent electrode layer 10 sequentially laminated on the electrode layer 8 formed on the p type region, and moreover, the light shield wall 12 is implanted, consisting of opaque substance, between the photo detecting element 3 and the electroluminescent element 4 with evaporation. Then, the photo detection element 17 for malfunction prevention is formed to the light shield wall 12, avoiding malfunction.</p> |
