发明名称 |
Metal crossover in high voltage IC with graduated doping control |
摘要 |
Non-uniformly doped regions are formed adjacent to semiconductor junctions which underlie high voltage crossovers. The non-uniformly doped regions prevent junction breakdown caused by strong electric fields. The voltage drop between a crossover and an element of an integrated circuit is spread over the non-uniformly doped region, to lessen the voltage drop between the crossover and the junction and lessen the electric field at the junction. Dopant concentrations in the non-uniformly doped region may be selected to minimize use of silicon real estate. In some embodiments, a graded dopant concentration is lightest near the junction and increases toward a circuit element being protected.
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申请公布号 |
US5426325(A) |
申请公布日期 |
1995.06.20 |
申请号 |
US19930101886 |
申请日期 |
1993.08.04 |
申请人 |
SILICONIX INCORPORATED |
发明人 |
CHANG, MIKE F.;OWYANG, KING;WILLIAMS, RICHARD K. |
分类号 |
H01L21/768;H01L21/22;H01L21/266;H01L23/522;H01L29/06;H01L29/78;(IPC1-7):H01L29/10;H01L29/38 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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