| 摘要 |
PURPOSE:To increase the speeds of signal processings and the life times of semiconductor devices, by providing on a lead frame a heat dissipating plate made of the material having a high thermal conductivity wherein its own insulating quality is secured, and by making the elimination of the hygroscopic phenomenon of the lead frame possible without the use of any expensive insulating bonding tape. CONSTITUTION:In a lead frame 4 for semiconductor devices wherein a heat dissipating plate 5 is laminated on an inner lead part 1, as the heat dissipating plate 5, a metallic plate subjected to an insulating treatment is used, and the metallic plate is bonded to the more inside region of the lead frame 4 than the inner lead part 1 via a bonding agent. Also, according to the insulating treatment, the metallic plate is formed by the depositing of the sol of a metallic alkoxide to it and by its drying and burning. |
