THIN-FILM TRANSISTOR AND MANUFACTURE THEREOF

摘要

PURPOSE:To provide a TFT, in which the dispersions of capacitance CGS between a gate and a source and capacitance CGS between the gate and a drain are minimized with a small area, and manufacture thereof. CONSTITUTION:A gate electrode 2, a gate insulating film 9, a semiconductor layer 3 and a transparent electrode layer 13 are formed successively onto a transparent substrate 1, a photo-resist layer 11 covering the transparent electrode layer 13 is formed, the transparent substrate 1 side is exposed using the gate electrode 2 as a mask, the photo-resist layer 11 in the upper section of the gate electrode 2 is removed through etching, and the transparent electrode layer 13 is patterned. Accordingly, a first source electrode 8a, a first drain electrode 7a and a picture element electrode 6 are shaped, and a second source electrode 8b and a second drain electrode 7b are formed onto the first source electrode 8a and the first drain electrode 7a.