| 摘要 |
<p>PURPOSE:To maintain the steepness of current-voltage characteristic at a sufficient level, to improve the asymmetry of current conduction and to obviate the generation of leakage of current by adopting an MSM structure formed by using ZnS as a nonlinear resistance layer for an active element. CONSTITUTION:The first nonlinear resistance layer 4a and the second nonlinear resistance layer 4b are formed in such a manner that the projecting part of pixel electrode 2 and the projecting part of bus line 3 are superposed on each other. An insulator layer 5 is so formed as to cover all of these resistance layers 4a, 4b. Through-holes are formed in the upper parts of the resistance films 4a, 4b of the insulator layer 5. The steepness of the I-V characteristic above tantalum oxide is obtd. by using zinc sulfide as the resistance layers 4a, 4b in such a case. Further, rare earth element, group III element, copper or manganese, or their compd. are doped into the zinc sulfide or the compsn. ratio of the zinc and sulfur of the zinc sulfide is deviated from stoichiometric ratio. thereby, the I-V characteristic is changed, for example, the steepness is enhanced.</p> |
