| 摘要 |
PURPOSE: To increase the operating speed of a bipolar device by forming a separated region and a groove in a semiconductor near a silicide and depositing an oxide into the separated region and the groove, so as to complete the production of the integraged circuit. CONSTITUTION: The layers of an oxide 9 and a polysilicon 11 are formed on the semiconductor surface of a substrate 1 with an embedded oxide 3 and a silicide layer 5. In order to form a separated region in a semiconductor 7, a pattern is formed in a first process. In addition, in order to form a groove which exposes a part of the layer 9, a pattern is formed by a second process. Then the process which deposits an oxide 17 in the separated region and in the groove completes the manufacture of an integrated circuit. Then the oxide 9 and the layer 11 are closer to the layer 5 than to the oxide layer 3. A parasitic capacity and resistance are reduced by this to also reduce a collector capacitance and resistance.
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