| 摘要 |
PURPOSE: To improve isolation between components within a polysilicon layer by forming an isolation layer, while ion-implanting a highly-dosed material into a polysilicon layer portion not above an active region of an integrated circuit and annealing such a polysilicon layer. CONSTITUTION: A photoresist 42 is positioned, so that an active region of a polysilicon layer 40 and a contact region 41 between the layer 40 and a polysilicon layer 36 on an integrated circuit are protected. Then, a high dose oxygen ion implantation 44 is effected into a portion not covered by the photoresist 42. After the ion implantation, the resultant is annealed to form an insulating layer for forming a silicon dioxide layer 46. On the other hand, the layer 36 is also processed in a manner similar to that of the layer 40 for forming a silicon nitride layer 37 that is an insulating layer between adjacent active components. As a result, a single layer or more polycrystalline layers can be satisfactorily isolated between components. |
