| 摘要 |
<p>PURPOSE:To reduce sufficiently an off-current by a method wherein a channel region semiconductor layer on a source region semiconductor layer and a drain region semiconductor layer is a non-dope layer, and also the non-dope layer is made as a film thickness within a specific range. CONSTITUTION:A source electrode 12 and a drain electrode 13 composed of a high melting point metal are formed on a translucent substrate 11. On the source electrode 12 and drain electrode 13, a source region semiconductor layer 17 and a drain region semiconductor layer 18 composed of a polycrystalline silicon are formed. On a space between these source region semiconductor layer 17 and drain region semiconductor layer 18, a channel region semiconductor layer 14 composed of a non-dope polycrystalline silicon is formed so that a film thickness W is set to 500Angstrom to 1500Angstrom . Above region between the source electrode 12 and drain electrode 13 of the channel region semiconductor layer 14, a gate electrode 16 is formed via a gate insulation film 15. Accordingly, an excellent on/off ratio can be obtained.</p> |
