| 摘要 |
PURPOSE: To simplify the manufacturing of micromechanical components by arranging a highly-doped silicon layer under a silicon structure, part of which is specifically doped, and by anodizing the silicon layer. CONSTITUTION: A silicon layer 3 that is a highly-doped material is introduced into a difference-fit silicon substrate 2 by embedding or diffusion. Then, a cover layer 1 is formed of a thin silicon plate on the obverse surface of the resultant by epitaxy. Successively, grooves 5 that define structures 6 on the layer 3 are provided by etching. Further, the layer 3 is removed by under-etching the structures 6. Thereafter, the silicon structures are anodized in an HF solution. As a result, the manufacturing of micromechanical components can be simplified, and thus geometric dimensions can be controlled accurately. |
