| 摘要 |
<p>PURPOSE:To taper a cross section of a gate electrode by a method wherein a Cr film is formed and a mixed liquid containing cerium nitrate ammonium, nitrate and water as main components is used as an etchant to etch Cr to form a gate electrode. CONSTITUTION:A Cr 19 film is formed on a transparent substrate 10 by sputtering, etc. A resist film 20 is rotatably applied and formed on the Cr film and exposed to light and developed to form gate wiring patterns. This substrate 10 is etched with a mixed liquid of cerium nitrate ammonium, nitrate and water as an etchant and with the resist film 20 as a mask, and the Cr 19 is patterned on a gate wiring. Thus, a gate electrode 11 can be tapered and throughput can be enhanced.</p> |
