| 摘要 |
PURPOSE:To obtain a highly reliable semiconductor laser in which power consumption is reduced by decreasing the high temperature operating current. CONSTITUTION:An upper clad layer formed on an active layer 3 comprises a first upper clad layer 4 having. carrier concentration as high as 1X10<18>-1X10<20>cm<-1> and thickness (tA) as thin as 0.01-0.10mum, and a second clad layer 20 having carrier concentration as low as 1X10<15>-1X10<17>cm<-3> and thickness (tB) as tick as 0.3mum. Since the carrier concentration of the first upper clad layer 4 is high in the vicinity of the active layer 3, overflow of minority carrier is suppressed under high temperature and leakage current is also suppressed because of the thick clad layer 4. Furthermore, the absorption loss and high temperature operating current are decreased because of the thick total thickness (tA+tB) of the upper clad layer. |
