发明名称 SEMICONDUCTOR MEMORY
摘要 PURPOSE:To increase read-out operational speed of a sense amplifier. CONSTITUTION:An ON resistor having fully larger resistance than a transistor Tr32 and a transistor Tr33 having current driving capability of the same extent as the Tr32 are provided between a source of the transistor Tr32 forming a level holding circuit with an inversible amplifier IV31 and a power supply potential VDD. A gate length of the transistor Tr32 is made as short as possible in a possible range. Thereby, gate capacity of the transistor Tr32, that is, load capacity of the inversible amplifier IV31 is made small and read-out operational speed is increased.
申请公布号 JPH07153292(A) 申请公布日期 1995.06.16
申请号 JP19930301375 申请日期 1993.12.01
申请人 NEC CORP 发明人 NAKAJIMA YASUHIRO
分类号 G11C17/18;G11C7/06;G11C16/26 主分类号 G11C17/18
代理机构 代理人
主权项
地址