| 摘要 |
<p>PURPOSE: To provide an improved architecture for a memory array by forming the array from plural half-sectors and connecting each separate grounding line with an grounding circuit and letting them receive a half-sector grounding signal. CONSTITUTION: In a deletion operation mode, a negative wellvoltage VNWnm becomes L. Also, a half sector selection signal DnOm becomes H only when a half-sector is selected. For the selected half sector, an output of NAND gate 328 changes to L. Thus, a transistor Tr N336 is brought to conduction, and Tr P330 is brought to non-conduction. As the result, a pulldown Tr N340 is turned off and an output pull-up Tr is turned on. Therefore, a signal ARVSSnm becomes H only for the selected half-sector. Resistors Tr P332 and N338 and a gate capacity of Tr P334 work to secure that Tr N330 surely becomes off to avoid a clover-current effect before P334 becomes on.</p> |
