ORGANOMETALLIC VAPOR GROWTH METHOD AND PREPARATION OF LIGHT-EMITTING ELEMENT

摘要

PURPOSE:To obtain an MOCVD method enabling formation of a compound semiconductor layer containing Mg and an MOCVD method enabling easy formation of a grated structure for the compound semiconductor layer. CONSTITUTION:An MOCVD method wherein a II-VI compound semiconductor layer is formed by using an organometallic compound of biscyclopentadienyl magnesium series of which a vapor pressure at 330 deg.CK 15 1.3X10 Pa (0.1 torr) to 1.3X10<2>Pa (1.0 torr), or an MOCVD method wherein a four-element mixed crystal series compound semiconductor layer constituted of two kinds of group II elements and two kinds of group VI elements is formed and wherein the flow rate of one of two kinds of material gases containing the group VI elements is changed in a state of the flow rates of two kinds of material gases containing the group II elements being held fixed and thereby the compositional rates of the group II elements in the compound semiconductor layer are changed.